file no. : 2049 rev. no. : a page no. : 1 of 2 type : BF194/bf195 polarity : npn application : if/rf transistor package : to - 92 absolute maximum ratings : characteristic symbol rating unit collector - base voltage v cbo 30 v collector - emitter voltage v ceo 20 v emitter - base voltage v ebo 5 v total power dissipation @ t a = 25c p d 250 mw collector current i c 30 ma junction temperature t j 125 c storage temperature t stg -65 to +125 c thermal characteristics thermal resistance, junction to ambient r q j- a = 0.4c/mw electrical characteristics ( t amb = 25c, unless otherwise specified) characteristic symbol min max unit off characteristics collector - emitter breakdown voltage b vceo (i c = 1.0 ma dc, i b = 0) 20 - vdc collector - base breakdown voltage b vcbo (i c = 10 a dc, i e = 0) 30 - vdc emitter - base break down voltage b vebo (i e = 10 a dc, i c = 0) 5 - vdc on characteristics dc current gain h fe 38 200 - (i c = 1.0 ma dc, v ce = 10.0 v dc) base - emitter voltage v be (on) 0.65 0.74 vdc (i c =1 ma dc, vce = 10 v dc) device specification c e b
file no. : 2049 rev. no. : a device specification page no. : 2 of 2 characterstic symbol min max unit small signal characteristics current - gain - bandwidth product f t (i c = 1 ma dc, v ce = 10 v dc, f = 100 mhz) - 260(typ) mhz common - emitter feedback capacitance c re (v ce = 10 v dc, ic = 1 ma dc) 0.95(typ) pf noise figure nf (i c = 1 ma, v ce =10v, g s = 20ma/v, f = 1 mhz) 3.5(typ) db (i c = 1 ma, v ce =10v, g s = 10ma/v, f = 100 mhz) 4.0 (typ) db hfe classification: classification bf195d bf195c BF194b hfe 38-71 71-110 110-200
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